Title :
16-Gigabit, 8-level NAND flash memory with 51nm 44-cell string technology
Author :
Kim, Tae-Kyung ; Chang, Sungnam ; Hong, SeungWan ; Chae, Dong Hyuk ; Lee, Keonho ; Choi, Jeong-Hyuk
Author_Institution :
Memory Div., Samsung Electron. Co. Ltd., Hwasung
Abstract :
Eight-level NAND flash memories with 51 nm design rule and 44-cell string floating gate technology have been successfully developed for the first time. 44-cell string with floating poly silicon and tungsten silicide (WSi) gate structure reduced the cell area per bit and improved chip cost efficiency. 44-cell string structure shows acceptable cell current and the results of endurance and interference are quite comparable to the conventional 32-cell string structure.
Keywords :
elemental semiconductors; flash memories; silicon; tungsten compounds; 44-cell string floating gate technology; Si-WSiJk; cell current; chip cost efficiency; eight level NAND flash memory; floating polysilicon; gate structure; size 51 nm; tungsten silicide; Costs; Design engineering; Interference; Lithography; Nonvolatile memory; Product design; Silicides; Silicon; Tungsten; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
Conference_Location :
Edinburgh
Print_ISBN :
978-1-4244-2363-7
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2008.4681711
