A Macromodel of MOSFET for Deep Submicron Analog Circuit Simulation

The previous models and equivalent circuits of deep submicron MOSFET are extremely complicated, for diversified short-channel effects. Based on the nonlinear resistances of devices, we get an I-V equation and create a simple equivalent circuit macro-model. Compared with the previous models, the equation is an analytic expression and has fewer parameters and no discontinuous point of linear and saturation regions .The convergence becomes easier and the calculated speed becomes faster when the equivalent circuit macro-model is used to simulate the low voltage analog IC. In the end, we give an application of our model to validate the accuracy.