Title :
Noise immunity characteristics of semiconductor memory devices-a comparison of UV-EPROM with static RAM
Author :
Mutoh, Atsuo ; Nitta, Shuichi
Author_Institution :
Fac. of Eng., Tokyo Univ. of Agric. & Technol., Japan
Abstract :
This paper describes noise immunity characteristics of two kinds of semiconductor memory devices: ultraviolet erasable programmable ROM (UV-EPROM) and static RAM (SRAM). Noise immunity characteristics of SRAM are compared with that of UV-EPROM and it is concluded that UV-EPROM is superior to SRAM from the point of view that a the former has a self-recovery function after malfunction due to noise and is effective in realizing safe and reliable digital systems
Keywords :
EPROM; SRAM chips; integrated circuit noise; integrated circuit testing; SRAM; UV-EPROM; noise immunity characteristics; self-recovery function; semiconductor memory devices; static RAM; ultraviolet erasable programmable ROM; Digital systems; Integrated circuit noise; Logic devices; Noise level; Random access memory; Read only memory; Read-write memory; Semiconductor device noise; Semiconductor memory; Voltage;
Conference_Titel :
Electromagnetic Compatibility, 1999 IEEE International Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-5057-X
DOI :
10.1109/ISEMC.1999.812885
