New analysis of heavily doped boron and arsenic in shallow junctions by X-ray photoelectron spectroscopy

Author

Tsutsui, K. ; Watanabe, M. ; Nakagawa, Y. ; Matsuda, T. ; Yoshida, T. ; Ikenaga, E. ; Kakushima, K. ; Ahmet, P. ; Nohira, H. ; Maruizumi, T. ; Ogura, A. ; Hattori, T. ; Iwai, H.

Author_Institution

Dept. of Electron. & Appl. Phys., Tokyo Inst. of Technol., Yokohama

fYear

2008

fDate

15-19 Sept. 2008

Firstpage

142

Lastpage

145

Abstract

Chemical bonding states of boron (B) in shallow P⁺/N junctions were studied by soft X-ray photoelectron spectroscopy (SXPES). The concentration profiles of B having different binding energies were successfully determined the SXPES combined with the step-by-step etching of Si substrates. The concentration profiles of B having the lowest binding energy can be assigned as activated B, which agreed quite well with those of holes determined by the Hall measurements, while those having the middle and highest binding energies must be attributed to deactivated B. Effects of the spike-RTA and flush lamp annealing (FLA) were compared regarding the concentration profiles of B and UV Raman spectroscopy. Arsenic (As) doped layers were also studied by the X-ray photoelectron spectroscopy and the two different bonding states were revealed for As atoms embedded in Si substrates.

Keywords

Hall effect; Raman spectra; X-ray photoelectron spectra; arsenic; binding energy; boron; doping profiles; elemental semiconductors; etching; incoherent light annealing; p-n junctions; rapid thermal annealing; silicon; ultraviolet spectra; Hall measurements; SXPES; Si; Si substrates; Si:As-Si:B; UV Raman spectroscopy; arsenic; binding energies; chemical bonding states; concentration profiles; flash lamp annealing; heavily doped boron; shallow P⁺-N junctions; shallow junctions; soft X-ray photoelectron spectroscopy; spike-RTA; step-by-step etching; Annealing; Atomic layer deposition; Bonding; Boron; Chemicals; Energy measurement; Etching; Lamps; Raman scattering; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European

Conference_Location

Edinburgh

ISSN

1930-8876

Print_ISBN

978-1-4244-2363-7

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2008.4681719

Filename

4681719