• DocumentCode
    3489268
  • Title

    Enhancing noise margins of FinFET SRAM by integrating Vth-controllable flexible-pass-gates

  • Author

    Endo, Kazuhiko ; O´uchi, Shin-ichi ; Ishikawa, Yuki ; Liu, Yongxum ; Matsukawa, Takashi ; Masahara, Meishoku ; Sakamoto, Kunihiro ; Tsukada, Junichi ; Ishii, Kenichi ; Yamauchi, Hiromi ; Suzuki, Eiichi

  • Author_Institution
    Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
  • fYear
    2008
  • fDate
    15-19 Sept. 2008
  • Firstpage
    146
  • Lastpage
    149
  • Abstract
    We propose a flexible-pass-gate (Flex-PG) FinFET SRAM to enhance both the read and write noise margins. The flip-flop in the Flex-PG SRAM cell consists of usual FinFETs while its pass gates consist of Vth-controllable four-terminal (4T) FinFETs with independent double-gates. We experimentally demonstrate that the proposed Flex-PG SRAM increases both the read and write margins by controlling the Vth of the pass gates.
  • Keywords
    MOSFET; SRAM chips; flexible electronics; flip-flops; FinFET SRAM; flexible pass gates; flip-flop; noise margins; read and write margins; Circuits; Electronic mail; Energy consumption; FinFETs; Flip-flops; Nanoelectronics; Random access memory; Stability; Ultra large scale integration; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
  • Conference_Location
    Edinburgh
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4244-2363-7
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2008.4681720
  • Filename
    4681720
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3489268