Title :
A power-efficient impoved-stability 6T SRAM cell in 45nm Multi-Channel FET technology
Author :
Thomas, Olivier ; Guillaumot, Bernard ; Ernst, Thomas ; Cousin, Bastien ; Rozeau, Olivier
Author_Institution :
CEA-LETI/MINATEC, Grenoble
Abstract :
This paper presents an innovative 3D CMOS 6T SRAM cell design in multi-channel (MC) FET technology by well adapting the number of channels per device. A simulation model for the 45 nm MCFET has been developed based on silicon measurements. The electrical results validated by simulations, exhibit more than 25% power dissipation reduction and 17% cell stability improvement for the same area and read access time, when compared with a standard CMOS 6T SRAM cell designed in 2D.
Keywords :
CMOS memory circuits; SRAM chips; field effect transistors; CMOS; SRAM cell; cell stability; multichannel FET; power dissipation reduction; silicon measurements; CMOS technology; Electrostatics; Etching; FETs; Fluctuations; Random access memory; Semiconductor device modeling; Semiconductor films; Silicon on insulator technology; Substrates;
Conference_Titel :
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
Conference_Location :
Edinburgh
Print_ISBN :
978-1-4244-2363-7
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2008.4681721
