Title :
On the RESET-SET transition in Phase Change Memories
Author :
Puzzilli, Giuseppina ; Irrera, Fernanda ; Padovani, Andrea ; Pavan, Paolo ; Larcher, Luca ; Arya, Ankur ; Della Marca, Vincenzo ; Pirovano, Agostino
Author_Institution :
Dipt. di Ing. Elettron., Univ. di Roma "La Sapienza ", Rome
Abstract :
We characterize SET operation in Phase Change Memories. A measurement procedure aiming to investigate resistance transition from amorphous to crystalline states is shown. Results give interesting insights on the crystallization process of GST material and a simple model is introduced. Crystallization process obeys to a constant energy law. Fast SET pulses require high power; slow SET pulses can be implemented in low power applications. Results may be used for an optimized design of memory cell operating conditions.
Keywords :
antimony compounds; chalcogenide glasses; crystallisation; germanium compounds; phase change memories; semiconductor storage; Ge2Sb2Te5; RESET-SET transition; amorphous-crystalline state resistance transition; constant energy law; crystallization; low power applications; phase change memories; Amorphous materials; CMOS technology; Crystalline materials; Crystallization; Electrical resistance measurement; Geometry; Material storage; Phase change materials; Phase change memory; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
Conference_Location :
Edinburgh
Print_ISBN :
978-1-4244-2363-7
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2008.4681723
