High switching speed 1500 V IGBT for CRT deflection circuit

Author

Seki, Y. ; Hoshi, Y. ; Shimabukuro, H. ; Suganuma, N. ; Nishiura, Akira ; Uchida, Y.

Author_Institution

Fuji Electr. Corp. Res. & Dev. Ltd., Nagano, Japan

fYear

1991

fDate

22-24 Apr 1991

Firstpage

237

Lastpage

241

Abstract

A novel 1500 V IGBT (insulated gate bipolar transistor) was developed for the CRT horizontal deflection circuit. The authors clarify the device characteristics needed for the horizontal deflection circuit and demonstrate the 1500 V IGBT specially designed for this application. In order to make it possible to operate in the high frequency region, the device design and process conditions in the IBGT, i.e., the surface MOS-gate structure, the n⁺ buffer layer structure, and the lifetime killer control, were optimized. It was confirmed that this 1500 V IGBT was driven and operated up to a 70 kHz deflection frequency

Keywords

cathode-ray tubes; insulated gate bipolar transistors; semiconductor switches; 1500 V; 70 kHz; CRT deflection; IGBT; deflection frequency; device characteristics; horizontal deflection circuit; lifetime killer control; n⁺ buffer layer structure; process conditions; surface MOS-gate structure; Buffer layers; Cathode ray tubes; Displays; Frequency; Impedance; Insulated gate bipolar transistors; Inverters; Switching circuits; TV; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on

Conference_Location

Baltimore, MD

ISSN

1063-6854

Print_ISBN

0-7803-0009-2

Type

conf

DOI

10.1109/ISPSD.1991.146108

Filename

146108