Title :
Transient behaviors in partially depleted thin film SOI devices
Author :
Shin, H.C. ; Lim, I.S. ; Racanelli, M. ; Huang, W.M. ; Foerstner, J. ; Hwang, B.Y. ; Whitfield, J. ; Shin, H. ; Wetteroth, T. ; Hong, S. ; Wilson, S. ; Cheng, S.
Author_Institution :
Adv. Custom Technol., Motorola Inc., Mesa, AZ, USA
Abstract :
The floating-body configuration in SOI devices is desirable because of area efficiency and parasitics reduction. It has been predicted recently that there exists a dynamic floating-body effect in partially depleted SOI devices, which can lead to transient currents during device turn-on/off. This paper presents the observed current transients due to the dynamic floating body effects. The transient behaviors are analyzed and device simulation was done to confirm our analysis
Keywords :
silicon-on-insulator; thin film devices; transient analysis; area efficiency; current transients; dynamic floating-body effect; parasitics; partially depleted thin film SOI devices; simulation; Analytical models; Current measurement; Electrons; Medical simulation; Spontaneous emission; Steady-state; Substrates; Thin film devices; Threshold voltage; Transient analysis;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526432
