DocumentCode
3489586
Title
Accounting for experimentally observed transients in simulation of partially-depleted SOI MOSFET´s
Author
Wei, Andy ; Sherony, Melanie J. ; Antoniadis, Dimitri A.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
fYear
1995
fDate
3-5 Oct 1995
Firstpage
6
Lastpage
7
Abstract
This paper has shown that a unique set of carrier lifetime and impact ionization rate can be used to account for both the transient behavior and DC I-V characteristics of a partially-depleted SOI MOSFET. Operation of these devices at low to moderate drain voltages ( 1.0 to 2.0 V) was shown to be strongly related to both impact ionization rate and carrier lifetime
Keywords
MOSFET; carrier lifetime; impact ionisation; semiconductor device models; silicon-on-insulator; simulation; transient analysis; transient response; 1 to 2 V; DC I-V characteristics; Si; carrier lifetime; impact ionization rate; partially-depleted SOI MOSFET; simulation; transient behavior; transients; Charge carrier lifetime; Contracts; Current measurement; Electrons; Frequency measurement; Impact ionization; MOSFET circuits; Pulse measurements; Time measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location
Tucson, AZ
Print_ISBN
0-7803-2547-8
Type
conf
DOI
10.1109/SOI.1995.526433
Filename
526433
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