• DocumentCode
    3489648
  • Title

    A mobility extraction method for 3D multichannel devices

  • Author

    Dupré, C. ; Ernst, T. ; Bernard, E. ; Guillaumot, B. ; Vulliet, N. ; Coronel, P. ; Skotnicki, T. ; Cristoloveanu, S. ; Ghibaudo, G. ; Deleonibus, S.

  • Author_Institution
    CEA/LETI, Minatec, Grenoble
  • fYear
    2008
  • fDate
    15-19 Sept. 2008
  • Firstpage
    230
  • Lastpage
    233
  • Abstract
    A novel parameter extraction method is proposed to dissociate the current contributions of each channel of highly performing Multi-Channel CMOS Low Standby Power architecture. It is shown that the very high ION/IOFF ratio (NMOS: 2.27 mA/mum for 16 pA/mum PMOS 1.32 mA/mum for 16 pA/mum) obtained experimentally benefits from good short-channel mobility values of each type of channel despite a limited degradation of the GAA mobility value.
  • Keywords
    MOSFET; 3D multichannel devices; NMOS; mobility extraction; multi-channel CMOS low standby power architecture; parameter extraction; short-channel mobility; Current measurement; Degradation; Electric resistance; Electric variables; MOS devices; Numerical simulation; Parameter extraction; Silicon germanium; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
  • Conference_Location
    Edinburgh
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4244-2363-7
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2008.4681740
  • Filename
    4681740
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3489648