DocumentCode
3489661
Title
Microwave characteristics of high fmax low noise thin film silicon-on-sapphire MOSFETs
Author
Johnson, R.A. ; Chang, C.E. ; de la Houssaye, P.R. ; Garcia, G.A. ; Lagnado, I. ; Asbeck, P.M.
Author_Institution
California Univ., San Diego, La Jolla, CA, USA
fYear
1995
fDate
3-5 Oct 1995
Firstpage
18
Lastpage
19
Abstract
We report the microwave characteristics and modeling of thin-film silicon-on-sapphire n- and p-channel MOS transistors with high fmax , and low Fmin. N-channel and p-channel MOSFETs were fabricated with optically defined low resistance T-gates and found to have fmax values above 60 GHz and 40 GHz, respectively. The minimum noise figure, Fmin was below 1 dB at 2 GHz for both devices. Both the fmax and Fmin values are the best reported to date for silicon MOSFETs. A small signal model, similar to that used for MESFETs, is used here to model the devices, extract the small signal parameters and correlate the device structure with the measured performance
Keywords
MOSFET; S-parameters; equivalent circuits; microwave field effect transistors; semiconductor device models; semiconductor device noise; silicon-on-insulator; thin film transistors; 1 dB; 2 to 60 GHz; SHF; Si; low noise TFT; low resistance T-gates; microwave characteristics; minimum noise figure; n-channel MOS transistors; p-channel MOS transistors; silicon-on-sapphire MOSFETs; small signal model; small signal parameters extraction; thin film SOS MOSFETs; FETs; MESFETs; MOS devices; MOSFETs; Microwave devices; Optical films; Scattering parameters; Semiconductor device modeling; Semiconductor thin films; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location
Tucson, AZ
Print_ISBN
0-7803-2547-8
Type
conf
DOI
10.1109/SOI.1995.526439
Filename
526439
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