Title :
Microwave characteristics of high fmax low noise thin film silicon-on-sapphire MOSFETs
Author :
Johnson, R.A. ; Chang, C.E. ; de la Houssaye, P.R. ; Garcia, G.A. ; Lagnado, I. ; Asbeck, P.M.
Author_Institution :
California Univ., San Diego, La Jolla, CA, USA
Abstract :
We report the microwave characteristics and modeling of thin-film silicon-on-sapphire n- and p-channel MOS transistors with high fmax , and low Fmin. N-channel and p-channel MOSFETs were fabricated with optically defined low resistance T-gates and found to have fmax values above 60 GHz and 40 GHz, respectively. The minimum noise figure, Fmin was below 1 dB at 2 GHz for both devices. Both the fmax and Fmin values are the best reported to date for silicon MOSFETs. A small signal model, similar to that used for MESFETs, is used here to model the devices, extract the small signal parameters and correlate the device structure with the measured performance
Keywords :
MOSFET; S-parameters; equivalent circuits; microwave field effect transistors; semiconductor device models; semiconductor device noise; silicon-on-insulator; thin film transistors; 1 dB; 2 to 60 GHz; SHF; Si; low noise TFT; low resistance T-gates; microwave characteristics; minimum noise figure; n-channel MOS transistors; p-channel MOS transistors; silicon-on-sapphire MOSFETs; small signal model; small signal parameters extraction; thin film SOS MOSFETs; FETs; MESFETs; MOS devices; MOSFETs; Microwave devices; Optical films; Scattering parameters; Semiconductor device modeling; Semiconductor thin films; Silicon;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526439
