Title :
Experimental and theoretical analysis of hole transport in uniaxially strained pMOSFETs
Author :
Huet, K. ; Feraille, M. ; Rideau, D. ; Delamare, R. ; Aubry-Fortuna, V. ; Kasbari, M. ; Blayac, S. ; Rivero, C. ; Bournel, A. ; Tavernier, C. ; Dollfus, P. ; Jaouen, H.
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ. Paris Sud, Orsay
Abstract :
A new wafer bending experiment reports hole mobility variations in pMOS devices with uniaxial stress applied along the <110>, <-110> and <100> directions. Our results have been interpreted using Kubo-Greenwood (KG) formalism. Mobilities were calculated using the usual 3DHG KG formula, but also using a 2DHG calculation. The latter, that accounts for quantum confinement due to the transverse field, is based on a fully self-consistent Poisson-kp-Schrodinger scheme. This 2DHG approach appears to be mandatory for an accurate description of transport properties in strained inversion layers.
Keywords :
MOSFET; Poisson equation; k.p calculations; Kubo-Greenwood formalism; fully self-consistent Poisson-kp-Schrodinger scheme; hole transport; quantum confinement; strained inversion layers; uniaxial stress; uniaxially strained pMOSFET; wafer bending; CMOS technology; Capacitive sensors; Carrier confinement; MOS devices; MOSFETs; Piezoresistance; Silicon; Strain measurement; Stress measurement; Strips;
Conference_Titel :
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
Conference_Location :
Edinburgh
Print_ISBN :
978-1-4244-2363-7
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2008.4681741
