Title :
Integrity of gate oxide on TFSOI materials
Author :
Hong, S.O. ; Wetteroth, T. ; Shin, H. ; Wilson, S.R. ; Huang, W.M. ; Foerstner, J. ; Racanelli, M. ; Shin, H.C. ; Hwang, B.Y. ; Schroder, D.K.
Author_Institution :
Mater. Res. & Strategic Technol., Motorola Semicond. Products Sector, Mesa, AZ, USA
Abstract :
The quality of gate oxides on Thin-Film-Silicon-On-Insulator (TFSOI) substrates is essential for the development of TFSOI technologies. Compared with the extensive work on device characterization and circuit performance, however, data in this area are still limited. This paper presents a gate oxide integrity (GOI) study on both SIMOX (Separation-by-IMplantation-of-OXygen) and BESOI (Bonded-Etched-back-SOI) substrates. The effect of wafer polishing to reduce the initial surface micro-roughness is also discussed
Keywords :
SIMOX; polishing; semiconductor thin films; silicon-on-insulator; BESOI substrates; SIMOX substrates; TFSOI materials; gate oxide integrity; surface micro-roughness; wafer polishing; Capacitors; Circuit optimization; Design for quality; Electric breakdown; Pollution measurement; Semiconductor materials; Substrates; Surface contamination; Tunneling; Voltage;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526441
