Title :
Application of Ti salicide process on ultra-thin SIMOX wafer
Author :
Azuma, K. ; Kishi, A. ; Tanigawa, M. ; Kaneko, S. ; Naka, T. ; Ishihawa, A. ; Iguchi, K. ; Sakiyama, K.
Author_Institution :
VLSI Dev. Labs., Sharp Corp., Nara, Japan
Abstract :
Fully-depleted, ultra-thin SIMOX/CMOS is a suitable technology to achieve low voltage and high speed application because of its capability of low Vth operation. However, large resistivity of diffusion area is an issue. In this paper,a thin salicidation layer was adopted to decrease the sheet resistivity of the ultra-thin SIMOX layer. Good transistor characteristics with sheet resistivity less than one tenth of the non-silicided diffusion resistivity were achieved, and no degradation of the transistor characteristics was observed
Keywords :
MOSFET; SIMOX; characteristics measurement; semiconductor device metallisation; titanium; TiSi2; fully-depleted SIMOX/CMOS; high speed application; low voltage application; salicide process; sheet resistivity; transistor characteristics; ultra-thin SIMOX wafer; Application specific integrated circuits; CMOS integrated circuits; CMOS process; CMOS technology; Conductivity; High speed integrated circuits; MOS devices; Semiconductor films; Temperature; Very large scale integration;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526445
