Application of Ti salicide process on ultra-thin SIMOX wafer

Author

Azuma, K. ; Kishi, A. ; Tanigawa, M. ; Kaneko, S. ; Naka, T. ; Ishihawa, A. ; Iguchi, K. ; Sakiyama, K.

Author_Institution

VLSI Dev. Labs., Sharp Corp., Nara, Japan

fYear

1995

fDate

3-5 Oct 1995

Firstpage

30

Lastpage

31

Abstract

Fully-depleted, ultra-thin SIMOX/CMOS is a suitable technology to achieve low voltage and high speed application because of its capability of low Vth operation. However, large resistivity of diffusion area is an issue. In this paper,a thin salicidation layer was adopted to decrease the sheet resistivity of the ultra-thin SIMOX layer. Good transistor characteristics with sheet resistivity less than one tenth of the non-silicided diffusion resistivity were achieved, and no degradation of the transistor characteristics was observed

Keywords

MOSFET; SIMOX; characteristics measurement; semiconductor device metallisation; titanium; TiSi₂; fully-depleted SIMOX/CMOS; high speed application; low voltage application; salicide process; sheet resistivity; transistor characteristics; ultra-thin SIMOX wafer; Application specific integrated circuits; CMOS integrated circuits; CMOS process; CMOS technology; Conductivity; High speed integrated circuits; MOS devices; Semiconductor films; Temperature; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1995. Proceedings., 1995 IEEE International

Conference_Location

Tucson, AZ

Print_ISBN

0-7803-2547-8

Type

conf

DOI

10.1109/SOI.1995.526445

Filename

526445