• DocumentCode
    3489766
  • Title

    Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study

  • Author

    Conzatti, F. ; De Michielis, M. ; Esseni, D. ; Palestri, P.

  • Author_Institution
    DIEGM, Univ. of Udine, Udine
  • fYear
    2008
  • fDate
    15-19 Sept. 2008
  • Firstpage
    250
  • Lastpage
    253
  • Abstract
    This paper presents the first Multi-Subband Monte Carlo study of uniaxially strained p-MOSFETs and analyzes the ingredients through which the strain improves both the long channel mobility and the ION of nanoscale transistors. In particular, our results show that the compressive stress in [110]/(001) p-MOS transistors increases the ION by improving both the injection velocity and the back-scattering coefficient.
  • Keywords
    MOSFET; Monte Carlo methods; backscatter; compressive strength; nanoelectronics; MOS transistors; back-scattering coefficient; channel mobility; compressive stress; drain current; injection velocity; multisubband Monte Carlo; nanoscale transistors; uniaxially strained p-MOSFETs; CMOS technology; Capacitive sensors; Compressive stress; Effective mass; Germanium silicon alloys; MOSFET circuits; Monte Carlo methods; Quantization; Silicon germanium; Uniaxial strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
  • Conference_Location
    Edinburgh
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4244-2363-7
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2008.4681745
  • Filename
    4681745
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3489766