DocumentCode :
3489766
Title :
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study
Author :
Conzatti, F. ; De Michielis, M. ; Esseni, D. ; Palestri, P.
Author_Institution :
DIEGM, Univ. of Udine, Udine
fYear :
2008
fDate :
15-19 Sept. 2008
Firstpage :
250
Lastpage :
253
Abstract :
This paper presents the first Multi-Subband Monte Carlo study of uniaxially strained p-MOSFETs and analyzes the ingredients through which the strain improves both the long channel mobility and the ION of nanoscale transistors. In particular, our results show that the compressive stress in [110]/(001) p-MOS transistors increases the ION by improving both the injection velocity and the back-scattering coefficient.
Keywords :
MOSFET; Monte Carlo methods; backscatter; compressive strength; nanoelectronics; MOS transistors; back-scattering coefficient; channel mobility; compressive stress; drain current; injection velocity; multisubband Monte Carlo; nanoscale transistors; uniaxially strained p-MOSFETs; CMOS technology; Capacitive sensors; Compressive stress; Effective mass; Germanium silicon alloys; MOSFET circuits; Monte Carlo methods; Quantization; Silicon germanium; Uniaxial strain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
Conference_Location :
Edinburgh
ISSN :
1930-8876
Print_ISBN :
978-1-4244-2363-7
Electronic_ISBN :
1930-8876
Type :
conf
DOI :
10.1109/ESSDERC.2008.4681745
Filename :
4681745
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3489766
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