DocumentCode :
3489784
Title :
Automatic statistical determination of dislocation density in production SOI substrates
Author :
Allen, L.P. ; Genis, A. ; Jacobs, C. ; Allen, S.M. ; Snorrason, M. ; Zacharias, G.
Author_Institution :
Ibis Technol. Corp., Danvers, MA, USA
fYear :
1995
fDate :
3-5 Oct 1995
Firstpage :
32
Lastpage :
33
Abstract :
Summarizes a successful prototype demonstration of an automatic etch pit counting system which employs a neural network program for dislocation identification over a wide exponential range required for SOI material analysis. Overall results indicate that the automatic dislocation counting system is feasible to employ in SIMOX manufacturing. The neural network system exhibited sufficient capability for accurate dislocation density analysis of both standard and thin BOX SIMOX material, with clear recognition and classification of enhanced silicon defects
Keywords :
SIMOX; dislocation density; dislocation etching; electronic engineering computing; elemental semiconductors; etching; neural nets; silicon; statistical analysis; BOX SIMOX material; SIMOX manufacturing; SOI material analysis; Si; automatic statistical determination; dislocation density; dislocation identification; enhanced silicon defects; etch pit counting system; neural network program; production SOI substrates; CMOS technology; Etching; Jacobian matrices; Low voltage; Neural networks; Production; Prototypes; Rivers; Silicon on insulator technology; Space technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
Type :
conf
DOI :
10.1109/SOI.1995.526446
Filename :
526446
Link To Document :
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