Title :
Results on noise examination of fully-depleted accumulation mode SOI pMOSFETs
Author :
Lukvanchikova, N. ; Petrichuk, M. ; Garbar, M. ; Simoen, E. ; Claeys, C.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
Noise spectroscopy of levels is known to be a high-sensitive method for detection of defects, determination of their parameters and elucidation of their nature. This method is based on the analysis of generation-recombination noise that accompanies the processes of charge carrier capture and release on different centers in a semiconductor material or device. The purpose of this paper is to demonstrate the efficiency of the application of low-frequency noise methods for characterization of thin film fully-depleted accumulation mode SOI pMOSFETs
Keywords :
MOSFET; defect states; electron-hole recombination; semiconductor device noise; silicon-on-insulator; charge carriers; defect levels; generation-recombination noise; low-frequency noise; noise spectroscopy; semiconductor device; thin film fully-depleted accumulation mode SOI pMOSFETs; CMOS technology; Fluctuations; Low-frequency noise; MOSFETs; Noise level; Physics; Semiconductor device noise; Semiconductor devices; Substrates; Voltage;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526448
