Results on noise examination of fully-depleted accumulation mode SOI pMOSFETs

Author

Lukvanchikova, N. ; Petrichuk, M. ; Garbar, M. ; Simoen, E. ; Claeys, C.

Author_Institution

Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine

fYear

1995

fDate

3-5 Oct 1995

Firstpage

36

Lastpage

37

Abstract

Noise spectroscopy of levels is known to be a high-sensitive method for detection of defects, determination of their parameters and elucidation of their nature. This method is based on the analysis of generation-recombination noise that accompanies the processes of charge carrier capture and release on different centers in a semiconductor material or device. The purpose of this paper is to demonstrate the efficiency of the application of low-frequency noise methods for characterization of thin film fully-depleted accumulation mode SOI pMOSFETs

Keywords

MOSFET; defect states; electron-hole recombination; semiconductor device noise; silicon-on-insulator; charge carriers; defect levels; generation-recombination noise; low-frequency noise; noise spectroscopy; semiconductor device; thin film fully-depleted accumulation mode SOI pMOSFETs; CMOS technology; Fluctuations; Low-frequency noise; MOSFETs; Noise level; Physics; Semiconductor device noise; Semiconductor devices; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1995. Proceedings., 1995 IEEE International

Conference_Location

Tucson, AZ

Print_ISBN

0-7803-2547-8

Type

conf

DOI

10.1109/SOI.1995.526448

Filename

526448