Title :
Accumulation-type vs. inversion-type: narrow channel effect in VLSI mesa-isolated fully-depleted ultra-thin SOI PMOS devices
Author :
Su, K.W. ; Kuo, J.B.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The paper reports the sidewall-related narrow channel effect in mesa-isolated fully-depleted ultra-thin SOI inversion-type and accumulation-type PMOS devices. Based on the study, contrary to inversion-type devices, the threshold voltage of mesa-isolated ultra-thin SOI accumulation-type PMOS devices shrinks as the channel width scales down as a result of the buried-channel effect influenced by the sidewall via the buried oxide
Keywords :
MIS devices; VLSI; isolation technology; silicon-on-insulator; VLSI; accumulation-type devices; buried oxide; inversion-type devices; mesa-isolated fully-depleted ultra-thin SOI PMOS devices; narrow channel effect; sidewall; threshold voltage; Electrostatics; Isolation technology; MOS devices; Thin film devices; Threshold voltage; Transistors; Very large scale integration;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526449
