DocumentCode
3489823
Title
Accumulation-type vs. inversion-type: narrow channel effect in VLSI mesa-isolated fully-depleted ultra-thin SOI PMOS devices
Author
Su, K.W. ; Kuo, J.B.
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
1995
fDate
3-5 Oct 1995
Firstpage
38
Lastpage
39
Abstract
The paper reports the sidewall-related narrow channel effect in mesa-isolated fully-depleted ultra-thin SOI inversion-type and accumulation-type PMOS devices. Based on the study, contrary to inversion-type devices, the threshold voltage of mesa-isolated ultra-thin SOI accumulation-type PMOS devices shrinks as the channel width scales down as a result of the buried-channel effect influenced by the sidewall via the buried oxide
Keywords
MIS devices; VLSI; isolation technology; silicon-on-insulator; VLSI; accumulation-type devices; buried oxide; inversion-type devices; mesa-isolated fully-depleted ultra-thin SOI PMOS devices; narrow channel effect; sidewall; threshold voltage; Electrostatics; Isolation technology; MOS devices; Thin film devices; Threshold voltage; Transistors; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location
Tucson, AZ
Print_ISBN
0-7803-2547-8
Type
conf
DOI
10.1109/SOI.1995.526449
Filename
526449
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