DocumentCode :
3489855
Title :
A novel high voltage three-phase monolithic inverter IC with two current levels sensing
Author :
Miyazaki, Hideki ; Sakurai, Naoki ; Onda, Kenichi ; Tanaka, Tomoyuki ; Mori, Mutshuhiro ; Wada, Masayuki ; Matsuzaki, Hitoshi
Author_Institution :
Hitachi Ltd., Japan
fYear :
1991
fDate :
22-24 Apr 1991
Firstpage :
248
Lastpage :
253
Abstract :
A 250-V 1-A three-phase monolithic inverter IC (ECN3010) for variable-speed motor drives has been fabricated. Six insulated-gate bipolar transistors (IGBTs) and fast recovery diodes are integrated on one chip, for the output stages, using dielectric isolation. The IC provides many functions for driving a DC brushless motor by itself. A two-current-level sensing circuit has been developed to limit the motor start-up current and to turn off all the IGBTs when a short-circuit load occurs. The accuracy of the sensing circuit and its temperature dependence are discussed
Keywords :
DC motors; electric drives; insulated gate bipolar transistors; invertors; power integrated circuits; variable speed gear; 1 A; 250 V; DC brushless motor; ECN3010; current levels sensing; dielectric isolation; fast recovery diodes; high voltage three-phase monolithic inverter IC; insulated-gate bipolar transistors; short-circuit load; start-up current; temperature dependence; variable-speed motor drives; Brushless motors; Dielectrics; Diodes; Insulated gate bipolar transistors; Inverters; Monolithic integrated circuits; Motor drives; Power supplies; Pulse modulation; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on
Conference_Location :
Baltimore, MD
ISSN :
1063-6854
Print_ISBN :
0-7803-0009-2
Type :
conf
DOI :
10.1109/ISPSD.1991.146110
Filename :
146110
Link To Document :
بازگشت