Title :
Surface mobility of SOI MOSFET´s in the high temperature range: modelling and experiment
Author :
Reichert, G. ; Ouisse, T. ; Pelloie, J.L. ; Cristoloveanu, S.
Author_Institution :
Lab. de Phys. des Composants a Semicond., CNRS, Grenoble, France
Abstract :
The temperature range of silicon components may be substantially extended by using SOI devices. In this paper, we propose a new physical definition of the usual parameters appearing in the empirical models used for expressing the surface mobility. We also present a thorough experimental study of the mobility in thin film SOI MOSFET´s, in the temperature range 298-623K. All data agree with the theoretical model, which may thus be used for a physical interpretation of the results from room to high temperature
Keywords :
MOSFET; carrier mobility; high-temperature effects; semiconductor device models; silicon-on-insulator; 298 to 623 K; high temperature range; silicon components; surface mobility; thin film SOI MOSFETs; Impurities; Linear predictive coding; MOSFET circuits; Phonons; Rough surfaces; Silicon; Surface roughness; Temperature dependence; Temperature distribution; Transistors;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526451
