Title :
Effect of nitrogen and argon anneals on the leakage current of SIMOX TFSOI devices
Author :
Shin, Hae-Young ; Wetteroth, T. ; Wilson, Syd R. ; Harris, Gari ; Schroder, Dieter ; Krull, W. ; Alles, Mike
Author_Institution :
Mater. Res. & Strategic Technol., Motorola Inc., Mesa, AZ, USA
Abstract :
High temperature annealing treatment is a critical step in SIMOX technology. Inert gases such as Ar or N2 can be used during this anneal along with a small amount of oxygen. Characterization of TFSOI near-fully-depleted devices built on Ar and N2 annealed SIMOX indicate that, in the N2 annealed material, nitrogen atoms may become trapped at the SOI/BOX interface and cause excessive sub-threshold leakage in NMOS devices. This paper will discuss the effect of nitrogen on the device characteristics based on electrical and chemical measurements
Keywords :
MIS devices; SIMOX; annealing; leakage currents; thin film devices; Ar; N2; NMOS devices; SIMOX technology; SOI/BOX interface; TFSOI near-fully-depleted devices; chemical measurements; electrical measurements; high temperature annealing; inert gases; leakage current; Annealing; Argon; Atomic measurements; Chemicals; Electric variables measurement; Gases; Leakage current; MOS devices; Nitrogen; Temperature;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526452
