Title :
Radiation characterization of a low power 0.5 μm SOI-CMOS technology
Author :
Vu, T.O. ; Nguyen, A.V. ; Cable, J.S.
Author_Institution :
Semicond. Products Center, Hughes Aircraft Co., Newport Beach, CA, USA
Abstract :
SOI technologies such as bonded and SIMOX are good candidates to replace SOS in environments requiring radiation hardness up to and above 1 Mrad. We have developed a 0.5 μm SOI-CMOS process that is rad-hard to at least 300Krad(SiO2). The process and device characteristics, along with radiation results, are presented
Keywords :
CMOS integrated circuits; integrated circuit technology; radiation hardening (electronics); silicon-on-insulator; 0.5 micron; 300 krad; low power SOI-CMOS technology; radiation hardness; Aircraft; Bonding; CMOS technology; Circuits; Leakage current; MOS devices; Materials reliability; Process design; Radiation hardening; Threshold voltage;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526455
