Title :
Surface photovoltage monitoring of the Si-buried oxide interface charges
Author :
Nauka, K. ; Cao, M. ; Assaderaghi, F.
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
Abstract :
Shows that SPV can be employed for fast and reliable monitoring ofthe Si-BOX interfacial charges. Simulation ofthe 0.25 pm CMOS-SOI transistor indicated degradation ofthe subthreshold leakage when the charge density exceeded 2 * 1012 cm-2. Further MOSFET miniaturization could lower the critical value of QSi-Box to the levels presently observed in SIMOX SOI wafers
Keywords :
MOSFET; buried layers; elemental semiconductors; leakage currents; photovoltaic effects; silicon; silicon-on-insulator; 0.25 micron; CMOS-SOI transistor; MOSFET miniaturization; Si; Si-buried oxide interface charges; charge density; subthreshold leakage; surface photovoltage monitoring; Capacitance-voltage characteristics; Charge measurement; Collision mitigation; Hafnium; Laboratories; MOSFET circuits; Monitoring; Subthreshold current; Surface cleaning; Wafer bonding;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526456
