Title :
Coupling effects in high-resistivity SIMOX substrates for VHF and microwave applications
Author :
Raskin, J.P. ; Vanhoenacker, D. ; Colinge, J.P. ; Flandre, D.
Author_Institution :
Microwave Lab., Univ. Catholique de Louvain, Belgium
Abstract :
The use of high-resistivity SIMOX substrates has been proposed to enable the integration of low-loss adapted lines for MMIC applications in SOI CMOS technology. In this work we investigate the impact of the substrate resistivity on another important substrate coupling effect: the intrinsic load impedance of active transistors in amplifier configuration, which conditions the device maximum stable frequency. Related device and line modelling aspects are also discussed
Keywords :
CMOS integrated circuits; SIMOX; VHF circuits; field effect MMIC; substrates; MMIC; SOI CMOS technology; VHF applications; active transistors; amplifier; high-resistivity SIMOX substrates; load impedance; low-loss adapted lines; microwave applications; substrate coupling; CMOS technology; Capacitance; Conductivity; Dielectric losses; Dielectric substrates; Frequency response; Laboratories; MOS capacitors; MOSFETs; VHF circuits;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526461
