Title :
A comparative study of non-linearities in bulk and SOI linear resistors based on 2- and 4-transistor structures
Author :
Gentinne, B. ; Dessard, V. ; Louveaux, S. ; Flandre, D. ; Colinge, J.P.
Author_Institution :
DICE, Univ. Catholique de Louvain, Belgium
Abstract :
Both measurements and simulations based on accurate current models prove that the use of a SOI 4-transistor balanced structure as a passive triode resistor for continuous time MOSFET-C filters or integrators can give a linearity improvement of up to 20 dB over bulk counterparts
Keywords :
CMOS analogue integrated circuits; continuous time filters; integrating circuits; resistors; silicon-on-insulator; SOI CMOS analog circuits; balanced structures; continuous time MOSFET-C filters; current model; four-transistor structures; integrators; linear resistors; nonlinearities; passive triode resistors; simulation; two-transistor structures; Analog circuits; Analytical models; CMOS analog integrated circuits; High power amplifiers; Linearity; Numerical models; Power harmonic filters; Resistors; Temperature; Voltage;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526462
