DocumentCode
3490054
Title
Quantum-wire effects in thin and narrow SOI MOSFETs
Author
Baie, X. ; Colinge, J.P. ; Bayot, V. ; Grivei, E.
Author_Institution
DICE, Univ. Catholique de Louvain, Belgium
fYear
1995
fDate
3-5 Oct 1995
Firstpage
66
Lastpage
67
Abstract
If the dimensions of a semiconductor sample are reduced sufficiently, low-dimensionality effects involving quantization effects start to appear. These effects manifest themselves in the form of conductance oscillations. They appear at nanometer-scale dimensions at room temperature. However, it is possible to observe quantization effects in 100-nm-scale devices when the temperature is reduced sufficiently. In this paper measurements and simulations have been applied to SOI quantum wire MOSFETs
Keywords
MOSFET; quantum interference devices; semiconductor quantum wires; silicon-on-insulator; 100 nm; SOI quantum wire MOSFETs; conductance oscillations; low-dimensionality effects; quantization; semiconductor device; Aluminum; Annealing; Electrons; Energy states; Fluctuations; MOSFETs; Temperature; Voltage; Wave functions; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location
Tucson, AZ
Print_ISBN
0-7803-2547-8
Type
conf
DOI
10.1109/SOI.1995.526463
Filename
526463
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