Title :
Improved BESOI substrates for high speed ICs
Author :
Plettner, A. ; Haberger, K. ; Neumeier, K.
Author_Institution :
Corp. Res. & Dev., Siemens AG, Munich, Germany
Abstract :
A technology is presented, which is closely related to the BESOI fabrication process. A highly conductive layer buried beneath the insulating oxide layer is advantageous for the propagation of high frequency signals on interconnects
Keywords :
buried layers; integrated circuit interconnections; integrated circuit technology; silicon-on-insulator; substrates; BESOI substrates; buried conductive layer; fabrication; high frequency signal propagation; high speed ICs; insulating oxide layer; interconnects; Annealing; Displays; Electrical resistance measurement; Fabrication; Frequency; Geometry; Integrated circuit interconnections; Silicon; Substrates; Wafer bonding;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526465
