DocumentCode
3490148
Title
SOI-specific hot-hole induced degradation in PD and FD transistors
Author
Sinha, Shankar P. ; Duan, Franklin L. ; Ioannou, Dimitris E. ; Jenkins, William C. ; Hughes, Harold L.
Author_Institution
Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA
fYear
1995
fDate
3-5 Oct 1995
Firstpage
76
Lastpage
77
Abstract
Hot carrier related degradation and reliability of SOI devices has assumed recently increased importance. The purpose of this paper is to report two new effects in SOI MOSFETs, and the results of a detailed study of the substrate current. The first effect relates to recent reports claiming that during front gate electron injection stress, the degradation of the back channel is negligible. The second effect relates to the nature of the generation mechanisms of interface states during hot hole injection
Keywords
MOSFET; hot carriers; silicon-on-insulator; FD transistors; PD transistors; SOI MOSFETs; electron injection; hot-hole induced degradation; interface states; substrate current; Charge carrier processes; Charge pumps; Degradation; Electron traps; Hot carriers; Interface states; Laboratories; MOSFETs; Stress; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location
Tucson, AZ
Print_ISBN
0-7803-2547-8
Type
conf
DOI
10.1109/SOI.1995.526468
Filename
526468
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