Title :
Extraction of thermal resistance for fully-depleted SOI MOSFETs
Author :
Lee, T.-Y. ; Fox, R.M.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
This paper presents a convenient and direct method for extracting thermal impedance for fully-depleted SOI MOSFETs. The results are consistent with thermal resistance calculations using a physical model. Demonstration of the use of a Thermal Impedance Pre-Processor applied to an electrothermal circuit model in the simulator Saber to predict thermal transient response is also provided along with measurement data
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; thermal resistance; Saber simulator; Thermal Impedance Pre-Processor; electrothermal circuit model; fully-depleted SOI MOSFETs; self-heating; thermal resistance; transient response; Circuit simulation; Electrical resistance measurement; Immune system; Impedance; MOSFETs; Pulse measurements; Switches; Temperature; Thermal resistance; Transient response;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526469
