Analyses on the interface trap density and doping density of grounded-body SOI (GBSOI) nMOSFET

Author

Lyu, Jonn-Son ; Kang, Won-gu ; Hyung Joan Yoo

Author_Institution

Semicond. Div., Electron. & Telecommun. Res. Inst., Taejon, South Korea

fYear

1995

fDate

3-5 Oct 1995

Firstpage

82

Lastpage

83

Abstract

Interface trap density and doping density of grounded body SOI (GBSOI) nMOSFET were analysed by charge pumping current and subthreshold swing measurements. Especially, measurements for D_it and N _A of the sidewall channel inducing current leakage were managed. If the subthreshold regions of the main and sidewall channels are separated, D_it and N_A of the sidewall channel may be extracted by the differential subthreshold slope measurement with varing SOI body potential. D_it and N_A of the sidewall channel were about 1.6×10¹¹ eV^-1 cm ^-2 and 7×10¹⁴ cm^-3 respectively. These values are an order of magnitude larger and smaller than those of the main channel

Keywords

MOSFET; electron traps; interface states; semiconductor doping; silicon-on-insulator; GBSOI nMOSFET; charge pumping current; current leakage; differential subthreshold slope; doping density; grounded-body SOI; interface trap density; sidewall channel; subthreshold swing; Bonding; Charge measurement; Charge pumps; Current measurement; Density measurement; Doping; Etching; MOSFET circuits; Performance evaluation; Variable structure systems;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1995. Proceedings., 1995 IEEE International

Conference_Location

Tucson, AZ

Print_ISBN

0-7803-2547-8

Type

conf

DOI

10.1109/SOI.1995.526471

Filename

526471