Analyses on the interface trap density and doping density of grounded-body SOI (GBSOI) nMOSFET

Interface trap density and doping density of grounded body SOI (GBSOI) nMOSFET were analysed by charge pumping current and subthreshold swing measurements. Especially, measurements for D_it and N _A of the sidewall channel inducing current leakage were managed. If the subthreshold regions of the main and sidewall channels are separated, D_it and N_A of the sidewall channel may be extracted by the differential subthreshold slope measurement with varing SOI body potential. D_it and N_A of the sidewall channel were about 1.6×10¹¹ eV^-1 cm ^-2 and 7×10¹⁴ cm^-3 respectively. These values are an order of magnitude larger and smaller than those of the main channel