DocumentCode
3490252
Title
Narrow width effect of ROSIE isolated SOI MOSFET
Author
Fung, Samuel K H ; Mansun Chan ; Chan, Simon T H ; Ko, Ping K.
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
fYear
1995
fDate
3-5 Oct 1995
Firstpage
88
Lastpage
89
Abstract
The recent demand for low-power electronics has driven narrow-width MOSFETs into applications. Meanwhile, SOI devices offer significant power reduction as compared with bulk devices due to the reduced parasitic capacitances. Therefore, it is very attractive to apply narrow-width MOSFETs fabricated on SOI substrate in low-power digital and analog design. However, the behavior of narrow-width SOI MOSFETs has never been reported. In this paper, the threshold voltage behavior of narrow-width FD/NFD SOI MOSFETs with ROSIE (Re-Oxidized Silicon Island Edges) isolation is reported for the first time
Keywords
MOSFET; isolation technology; silicon-on-insulator; FD/NFD SOI MOSFET; ROSIE isolation; low-power electronics; narrow width effect; threshold voltage; Beak; Doping; Isolation technology; MOS devices; MOSFET circuits; Plasma applications; Plasma devices; Semiconductor films; Silicon; Virtual manufacturing;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location
Tucson, AZ
Print_ISBN
0-7803-2547-8
Type
conf
DOI
10.1109/SOI.1995.526474
Filename
526474
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