Title :
A high performance lateral bipolar transistor from a SOI CMOS process
Author :
Chan, Mansun ; Fung, Samuel K H ; Hu, Chenming ; Ko, Ping K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
A new bipolar device structure fabricated using a SOI CMOS process has been studied. The new base contact scheme is scalable with channel width, thus giving higher performance compared with the side base contact scheme
Keywords :
MOSFET; bipolar transistors; semiconductor technology; silicon-on-insulator; SOI CMOS process; base contact; fabrication; lateral bipolar transistor; BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Contact resistance; Doping; Electrical resistance measurement; Electrodes; Electron emission; MOSFETs;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526475
