Monolithic InP HBT W-band VCO-static divider

Author

Sovero, Emilio A. ; Li, Bin

Author_Institution

Vitesse Semicond. Corp., Camarillo, CA, USA

Volume

3

fYear

2004

fDate

6-11 June 2004

Firstpage

1325

Abstract

The work presented here describes one implementation of a monolithic voltage controlled oscillator (VCO) combined with a static divide-by-4 function. The oscillator uses a dual Colpitts design producing complementary outputs. For this circuit the VCO range of oscillation was centered at 80 GHz and covered the range of 76 to 84 GHz. The range of operation was limited by the VCO since the divider by itself was measured to work at 100 GHz. This circuit demonstrates the main component of a monolithic W-band phased locked loop. The circuits use indium phosphide (InP) double heterojunction bipolar transistors (DHBT). Ft and Fmax was measured to be greater than 300 GHz. The emitter width is 0.45 microns.

Keywords

III-V semiconductors; MIMIC; frequency convertors; heterojunction bipolar transistors; indium compounds; millimetre wave oscillators; phase locked loops; voltage-controlled oscillators; 100 GHz; 76 to 84 GHz; 80 GHz; HBT W-band VCO-static divider; InP; MMIC; W-band phased locked loop; double heterojunction bipolar transistors; dual Colpitts design; emitter width; frequency conversion; millimeter wave oscillator; monolithic VCO; voltage controlled oscillator; Distributed parameter circuits; Double heterojunction bipolar transistors; Frequency conversion; Heterojunction bipolar transistors; Indium phosphide; Millimeter wave technology; Millimeter wave transistors; Phase locked loops; Voltage control; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1338812

Filename

1338812