60 GHz VCO with wideband tuning range fabricated on VLSI SOI CMOS technology

Author

Ellinger, Frank ; Morf, Thomas ; Buren, G. ; Kromer, Christian ; Sialm, Gion ; Rodoni, Lucio ; Schmatz, Martin ; Jacke, Heinz

Author_Institution

Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland

Volume

3

fYear

2004

fDate

6-11 June 2004

Firstpage

1329

Abstract

A 60 GHz cross-coupled differential LC CMOS VCO is presented in this paper, which is optimized for a large frequency tuning range using conventional MOSFET varactors. The MMIC is fabricated on digital 90 nm SOI technology and requires a circuit area of less than 0.1 mm² including the 50 Ω output buffers. Within a frequency control range from 52.3 GHz to 60.6 GHz, a supply voltage of 1.5 V and a supply current of 15 mA, the circuit dividers a very constant output power of -6.8 ± 0.2 dBm and yields a phase noise between -85 to -92 dBc/Hz at 1 MHz frequency offset.

Keywords

CMOS integrated circuits; MIMIC; MOSFET; VLSI; integrated circuit design; silicon-on-insulator; varactors; voltage-controlled oscillators; CMOS technology; MMIC; MOSFET varactors; SOI technology; VLSI; circuit dividers; cross-coupled differential LC CMOS VCO; millimeter wave frequencies; output buffers; phase noise; wideband tuning range; CMOS technology; Circuit optimization; Frequency; MMICs; MOSFET circuits; Tuning; Varactors; Very large scale integration; Voltage-controlled oscillators; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1338813

Filename

1338813