Title :
Tantalum-gate SOI MOSFET´s featuring excellent threshold voltage control in low-power applications
Author :
Shimada, H. ; Ushiki, T. ; Hirano, Y. ; Ohmi, T.
Author_Institution :
Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
Abstract :
In this paper it is successfully demonstrated that Ta-gate SOI MOSFETs have excellent threshold voltage control in 1V applications
Keywords :
MOSFET; silicon-on-insulator; tantalum; 1 V; Ta; low-power applications; tantalum-gate SOI MOSFETs; threshold voltage control; Chemicals; Conductivity; Etching; Impurities; Ion implantation; MOSFET circuits; Oxidation; Thickness control; Threshold voltage; Voltage control;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526478
