DocumentCode
3490320
Title
On-chip decoupling capacitor design to reduce switching-noise-induced instability in CMOS/SOI VLSI
Author
Wang, L.K. ; Chen, Howard H.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
1995
fDate
3-5 Oct 1995
Firstpage
100
Lastpage
101
Abstract
The supply noise from the packaging of CMOS/SOI circuits can cause performance degradation, reliability reduction and even loss of circuit functionality due to the device latch-up problem. By properly adding on-chip decoupling capacitors in the proximity of the circuitry, we can effectively alleviate the switching noise problem and improve the performance of CMOS/SOI circuits
Keywords
CMOS integrated circuits; MOS capacitors; VLSI; circuit stability; integrated circuit noise; interference suppression; silicon-on-insulator; CMOS/SOI ICs; CMOS/SOI VLSI; Si; onchip decoupling capacitor design; supply noise; switching noise suppression; switching-noise-induced instability; Capacitors; Circuit noise; Noise reduction; Parasitic capacitance; Power supplies; Silicon on insulator technology; Surges; Switching circuits; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location
Tucson, AZ
Print_ISBN
0-7803-2547-8
Type
conf
DOI
10.1109/SOI.1995.526480
Filename
526480
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