An over 200-W output power GaN HEMT push-pull amplifier with high reliability

Author

Kikkawa, T. ; Maniwa, Toru ; Hayashi, H. ; Kanamura, M. ; Yokokawa, S. ; Nishi, M. ; Adachi, N. ; Yokoyama, M. ; Tateno, Y. ; Joshin, K.

Author_Institution

Fujitsu Labs. Ltd., Kanagawa, Japan

Volume

3

fYear

2004

fDate

6-11 June 2004

Firstpage

1347

Abstract

We describe a state-of-the-art 250-W output power AlGaN/GaN HEMT push-pull transmitter amplifier operated at a drain bias voltage of 50 V. We also demonstrated stable operation under RF stress testing for 1000 h at a drain bias voltage of 60 V, for the first time. The amplifier, combined with a digital pre-distortion (DPD) system, also achieved an adjacent channel leakage power ratio (ACLR) of less than -50 dBc for 1-carrier W-CDMA signals with a drain supply voltage of 50 V. We show, for the first time, that an AlGaN/GaN HEMTs push-pull amplifier can fulfill the requirements of W-CDMA systems.

Keywords

III-V semiconductors; aluminium compounds; code division multiple access; power HEMT; power amplifiers; semiconductor device manufacture; semiconductor device reliability; transmitters; 1000 h; 250 W; 50 V; 60 V; AlGaN-GaN; HEMT push-pull amplifier; RF stress testing; W-CDMA signals; W-CDMA systems; channel leakage power ratio; digital predistortion system; drain bias voltage; drain supply voltage; high electron mobility transistor; power amplifiers; semiconductor device fabrication; transmitter amplifier; Aluminum gallium nitride; Gallium nitride; HEMTs; High power amplifiers; Multiaccess communication; Power amplifiers; Power generation; Radiofrequency amplifiers; Transmitters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1338818

Filename

1338818