Title :
Emerging device nanotechnology for future high-speed and energy-efficient VLSI: Challenges and opportunities
Author_Institution :
Technol. & Manuf. Group, Intel Corp., Hillsboro, OR
Abstract :
Emerging device nanotechnologies as well as their integration on large silicon wafers present both challenges and opportunities for future high-speed and energy-efficient digital VLSI applications.
Keywords :
VLSI; elemental semiconductors; high-speed integrated circuits; nanoelectronics; silicon; Si; energy-efficient digital VLSI applications; high-speed VLSI; large silicon wafer integration; nanotechnology; CMOS technology; Energy efficiency; III-V semiconductor materials; MOSFETs; Nanotechnology; Photonic band gap; Quantum well devices; Silicon; Substrates; Very large scale integration;
Conference_Titel :
Solid-State Circuits Conference, 2008. ESSCIRC 2008. 34th European
Conference_Location :
Edinburgh
Print_ISBN :
978-1-4244-2361-3
Electronic_ISBN :
1930-8833
DOI :
10.1109/ESSCIRC.2008.4681782
