Damascene metal gate technology for damage-free gate-last high-k process integration

Author

Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo

Author_Institution

Inst. for Semicond. Technol., Darmstadt Univ. of Technol., Darmstadt, Germany

fYear

2009

fDate

6-8 Nov. 2009

Firstpage

1

Lastpage

3

Abstract

In this work, we present MOS capacitors and MOS transistors with a crystalline gadolinium oxide (Gd₂O₃) gate dielectric and metal gate electrode (titanium nitride) fabricated in a replacement gate process. Initial results on ALD-TiN/Gd₂O₃/Si gate stacks on p- and n-substrates with equivalent oxide thicknesses (EOT) of 3.0 nm and 1.5 nm, respectively, are presented in this work.

Keywords

MOS capacitors; MOSFET; gadolinium; semiconductor device manufacture; titanium compounds; Gd₂O₃; MOS capacitors; MOS transistors; TiN; crystalline gadolinium oxide gate dielectric; damage-free gate-last high-k process integration; damascene metal gate technology; metal gate electrode; size 1.5 nm; size 3.0 nm; Crystallization; Dielectric materials; Dielectric substrates; Electrodes; High K dielectric materials; High-K gate dielectrics; MOS capacitors; Molecular beam epitaxial growth; Silicon; Tin; High-k gate dielectrics; gate last process; metal gate MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Circuits and Systems (SCS), 2009 3rd International Conference on

Conference_Location

Medenine

Print_ISBN

978-1-4244-4397-0

Electronic_ISBN

978-1-4244-4398-7

Type

conf

DOI

10.1109/ICSCS.2009.5414209

Filename

5414209