Title :
Damascene metal gate technology for damage-free gate-last high-k process integration
Author :
Endres, Ralf ; Krauss, Tillmann ; Wessely, Frank ; Schwalke, Udo
Author_Institution :
Inst. for Semicond. Technol., Darmstadt Univ. of Technol., Darmstadt, Germany
Abstract :
In this work, we present MOS capacitors and MOS transistors with a crystalline gadolinium oxide (Gd2O3) gate dielectric and metal gate electrode (titanium nitride) fabricated in a replacement gate process. Initial results on ALD-TiN/Gd2O3/Si gate stacks on p- and n-substrates with equivalent oxide thicknesses (EOT) of 3.0 nm and 1.5 nm, respectively, are presented in this work.
Keywords :
MOS capacitors; MOSFET; gadolinium; semiconductor device manufacture; titanium compounds; Gd2O3; MOS capacitors; MOS transistors; TiN; crystalline gadolinium oxide gate dielectric; damage-free gate-last high-k process integration; damascene metal gate technology; metal gate electrode; size 1.5 nm; size 3.0 nm; Crystallization; Dielectric materials; Dielectric substrates; Electrodes; High K dielectric materials; High-K gate dielectrics; MOS capacitors; Molecular beam epitaxial growth; Silicon; Tin; High-k gate dielectrics; gate last process; metal gate MOSFET;
Conference_Titel :
Signals, Circuits and Systems (SCS), 2009 3rd International Conference on
Conference_Location :
Medenine
Print_ISBN :
978-1-4244-4397-0
Electronic_ISBN :
978-1-4244-4398-7
DOI :
10.1109/ICSCS.2009.5414209
