A 149W recessed-gate AlGaN/GaN FP-FET

Author

Okamoto, Y. ; Ando, Y. ; Hataya, K. ; Nakayama, T. ; Miyamoto, H. ; Inoue, T. ; Senda, M. ; Hirata, K. ; Kosaki, M. ; Shibata, N. ; Kuzuhara, M.

Author_Institution

Syst. Devices Res. Labs., NEC Corp., Shiga, Japan

Volume

3

fYear

2004

fDate

6-11 June 2004

Firstpage

1351

Abstract

A recessed-gate AlGaN/GaN field-modulating plate (FP) FET was successfully fabricated on a SiC substrate. By employing recessed-gate structure for an FP-FET, the transconductance (gm) was increased from 130 mS/mm to 220 mS/mm, leading to an improvement in gain characteristics. The gate breakdown voltage (BV_gd) was improved from 160V for the planar FP-FET to 200V for the recessed FP-FET, resulting from one-order reduction in gm and BV_gd, current collapse was suppressed by introducing the recessed-gate structure. At 2GHz, a 32mm-wide recessed FP-FET exhibited an output power of 149 W (4.7W/mm) with 64% power-added efficiency and 8.7 dB linear gain with a drain bias of 47 V.

Keywords

III-V semiconductors; aluminium compounds; microwave field effect transistors; semiconductor device manufacture; silicon compounds; wide band gap semiconductors; 149 W; 160 V; 2 GHz; 200 V; 47 V; 8.7 dB; AlGaN-GaN; current collapse; field-modulating plate FET; gain characteristics; gate breakdown voltage; recessed-gate structure; transconductance; Aluminum gallium nitride; Electrodes; Etching; FETs; Gallium nitride; Passivation; Plasma measurements; Research and development; Silicon carbide; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1338819

Filename

1338819