Title :
50 watt MMIC power amplifier design for 2 GHz applications
Author :
Akkul, Mustafa ; Sarfraz, Muhammed ; Mayock, Jim ; Bosch, Wolfgang
Author_Institution :
Filtronic plc., Shipley, UK
Abstract :
In this paper the design and the measurement of a 2 GHz 50 Watt (CW) MMIC power amplifier (PA) are discussed. The authors believe that this is the most powerful MMIC implementation that has been reported. The amplifier utilizes a class-F combining structure and realized using the company internal 0.5 μm GaAs pHEMT power process. The MMIC measure 10×10 mm2 and delivers 50 Watts of CW power at an efficiency greater than 45% over more than 10% bandwidth at a nominal 12 V supply voltage. The amplifier gain is 21 dB throughout the operational band.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; gallium compounds; integrated circuit design; integrated circuit measurement; 0.5 micron; 12 V; 2 GHz; 21 dB; 50 W; GaAs; MMIC power amplifier; class-F combining structure; microwave power amplifier; Costs; Fabrication; Fingers; Gallium arsenide; High power amplifiers; MMICs; PHEMTs; Power amplifiers; Power generation; Power measurement;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1338820
