Title :
Effectively modeling the thermal behavior of trench-isolated bipolar transistors
Author :
Marano, I. ; d´Alessandro, V. ; Rinaldi, N.
Author_Institution :
Dept. of Electron. & Telecommun. Eng., Univ. of Naples, Naples
Abstract :
The thermal behavior of trench-isolated bipolar transistors is thoroughly analyzed. Detailed 3-D numerical simulations are performed to investigate the impact of all technological parameters of interest. A novel strategy to analytically evaluate the temperature field is proposed, which is based on the reduction of the domain under analysis to a simplified structure subdivided into the silicon-only trench box with convective boundary conditions at lateral sidewalls and the silicon substrate. An extensive comparison with numerical results proves that the model is extremely accurate over the whole range of parameters, and can be adopted for a fast evaluation of the thermal resistance of a trench device as well as of the temperature gradients within the silicon box surrounded by trenches.
Keywords :
bipolar transistors; elemental semiconductors; numerical analysis; silicon; thermal analysis; 3D numerical simulations; deep trench isolation; silicon substrate; silicon-only trench box; temperature gradients; trench-isolated bipolar transistors; Bipolar transistors; Insulation; Isothermal processes; Predictive models; Resistance heating; Silicon; Temperature; Thermal conductivity; Thermal engineering; Thermal resistance;
Conference_Titel :
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems, 2008. EuroSimE 2008. International Conference on
Conference_Location :
Freiburg im Breisgau
Print_ISBN :
978-1-4244-2127-5
Electronic_ISBN :
978-1-4244-2128-2
DOI :
10.1109/ESIME.2008.4525060
