Title :
Optical characterization of silicon-on-insulator
Author :
Li, G.G. ; Forouhi, A.R. ; Auberton-Herve, A. ; Wittkower, A.
Author_Institution :
n&k Technol. Inc., Santa Clare, CA, USA
Abstract :
A study of the optical properties of SOI wafers can provide a quick, nondestructive, and reliable characterization technique. In this paper, we demonstrate a new optical technique which can simultaneously and unambiguously determine thickness, interface roughness (σ), refractive index (n), and extinction coefficient (k) of thin films for SOI. The Forouhi-Bloomer dispersion equation for n and k is used to analyze measured reflectance spectra
Keywords :
optical constants; reflectivity; silicon-on-insulator; Forouhi-Bloomer dispersion equation; SOI wafers; Si-SiO2; extinction coefficient; interface roughness; nondestructive characterization; optical properties; reflectance spectra; refractive index; silicon-on-insulator; thickness; thin films; Absorption; Amorphous materials; Crystalline materials; Equations; Optical films; Quantum mechanics; Reflectivity; Silicon on insulator technology; Substrates; Thickness measurement;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526483
