• DocumentCode
    3490382
  • Title

    Optical characterization of silicon-on-insulator

  • Author

    Li, G.G. ; Forouhi, A.R. ; Auberton-Herve, A. ; Wittkower, A.

  • Author_Institution
    n&k Technol. Inc., Santa Clare, CA, USA
  • fYear
    1995
  • fDate
    3-5 Oct 1995
  • Firstpage
    106
  • Lastpage
    107
  • Abstract
    A study of the optical properties of SOI wafers can provide a quick, nondestructive, and reliable characterization technique. In this paper, we demonstrate a new optical technique which can simultaneously and unambiguously determine thickness, interface roughness (σ), refractive index (n), and extinction coefficient (k) of thin films for SOI. The Forouhi-Bloomer dispersion equation for n and k is used to analyze measured reflectance spectra
  • Keywords
    optical constants; reflectivity; silicon-on-insulator; Forouhi-Bloomer dispersion equation; SOI wafers; Si-SiO2; extinction coefficient; interface roughness; nondestructive characterization; optical properties; reflectance spectra; refractive index; silicon-on-insulator; thickness; thin films; Absorption; Amorphous materials; Crystalline materials; Equations; Optical films; Quantum mechanics; Reflectivity; Silicon on insulator technology; Substrates; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1995. Proceedings., 1995 IEEE International
  • Conference_Location
    Tucson, AZ
  • Print_ISBN
    0-7803-2547-8
  • Type

    conf

  • DOI
    10.1109/SOI.1995.526483
  • Filename
    526483
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3490382