Analysis of the thermal behavior of trench-isolated bipolar transistors fabricated on SOI substrates

Author

Marano, I. ; Alessandro, V.D. ; Rinaldi, N.

Author_Institution

Dept. of Electron. & Telecommun. Eng., Univ. of Naples Federico II, Naples

fYear

2008

fDate

20-23 April 2008

Firstpage

1

Lastpage

7

Abstract

The thermal behavior of trench-isolated bipolar transistors fabricated on SOI (silicon-on-insulator) substrates is analyzed. Detailed 3-D numerical simulations are performed to investigate the impact of all technological parameters of interest. A new analytical model to evaluate the temperature field is proposed, which is based on the reduction of the domain under analysis to a silicon rectangular parallelepiped with convective boundary conditions at lateral and bottom faces. An extensive comparison with numerical results proves that the model is extremely accurate over the whole range of parameters, and can be adopted for a fast evaluation of the thermal resistance of a trench SOI device as well as of the temperature gradients within the silicon island surrounded by trenches and buried oxide.

Keywords

bipolar transistors; isolation technology; numerical analysis; silicon-on-insulator; SOI substrates; convective boundary conditions; numerical simulations; silicon rectangular parallelepiped; silicon-on-insulator; thermal behavior; trench-isolated bipolar transistors; Analytical models; Bipolar transistors; Boundary conditions; Dielectric substrates; Isolation technology; Numerical simulation; Silicon on insulator technology; Temperature distribution; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems, 2008. EuroSimE 2008. International Conference on

Conference_Location

Freiburg im Breisgau

Print_ISBN

978-1-4244-2127-5

Electronic_ISBN

978-1-4244-2128-2

Type

conf

DOI

10.1109/ESIME.2008.4525063

Filename

4525063