DocumentCode
3490420
Title
Transient effects in floating body SOI NMOSFETs
Author
Gautier, Jacctues ; Jenkins, Keith A. ; Sun, Jack Y C
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
1995
fDate
3-5 Oct 1995
Firstpage
112
Lastpage
113
Abstract
The consequence of floating body operation of SOI devices is the existence of several phenomena, like the kink effect and supra ideal subthreshold slope. In this paper, we report the associated transient effects observed for fast gate pulses by high speed measurements and 2-D numerical simulations. It is shown that due to floating body operation, the drain current of SOI devices during fast switching is very different from the DC value. This must be taken into account for accurate simulation of circuits
Keywords
MOSFET; silicon-on-insulator; transient analysis; 2D numerical simulations; drain current; fast switching; floating body SOI NMOSFETs; gate pulses; high speed measurements; transient effects; CMOS technology; Current measurement; Digital circuits; Impact ionization; Lifting equipment; MOSFET circuits; Numerical simulation; Pulse measurements; Sun; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location
Tucson, AZ
Print_ISBN
0-7803-2547-8
Type
conf
DOI
10.1109/SOI.1995.526486
Filename
526486
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