DocumentCode
3490424
Title
Toward 1 Gfps: A multi-collection-gate BSI imager
Author
Nguyen, H.D. ; Dao, V.T.S. ; Yamada, T. ; Etoh, T.G.
Author_Institution
Fac. of Sci. & Eng., Kinki Univ., Higashi, Japan
fYear
2012
fDate
1-3 Aug. 2012
Firstpage
438
Lastpage
442
Abstract
A concept on an ultra-high-speed image sensor is presented, targeting 1Gfps. The structure of the sensor is simple. The sensor is a backside illuminated one with the pixels, each of which is equipped with nine collection gates on the front side. During one frame interval, one collection gate collects all signal electrons generated by incident photons to the backside of the pixel. No signal electron migrates into other collection gates, prevented by a potential barrier of a p-well. Therefore, the fill factor is 100%. The collection process is repeated by changing the collection gates. Therefore, the theoretical maximum frame rate is the inverse of the travel time of an electron from the backside to a collection gate. A simulation result shows that 80% of electrons are collected within 1ns, suggesting that 1Gfps is achievable in the near future. Therefore, the sensor captures nine consecutive frames at the ultra-high frame rate.
Keywords
CCD image sensors; CCD; collection gates; incident photons; multicollection-gate BSI imager; p-well potential barrier; signal electrons; ultra-high frame rate; Charge coupled devices; Electric potential; Electrodes; Image sensors; Logic gates; Photonics; Simulation; BSI; CCD; Gfps; high-speed; image sensor;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Electronics (ICCE), 2012 Fourth International Conference on
Conference_Location
Hue
Print_ISBN
978-1-4673-2492-2
Type
conf
DOI
10.1109/CCE.2012.6315946
Filename
6315946
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