Identification and verification by experiment and simulation for the possibility of die cracking induces by UIL test

Author

Yuan, Zhongfa ; Yong Liu ; Irving, Scott ; Luk, Timwah

Author_Institution

Fairchild Semicond. (Suzhou) Corp., Suzhou

fYear

2008

fDate

20-23 April 2008

Firstpage

1

Lastpage

5

Abstract

An undamped inductive loading (UIL) or switching (UIS) test is critical for power MOSFET dice in order to evaluate the device "ruggedness". During UIL testing, die cracking may appear due to electrical overstress (EOS) induced by the power input. A method that combines both FEA and fractography analysis to identify and verify the possibility of die cracking induced by UIL test is presented in this paper.

Keywords

cracks; finite element analysis; fractography; power MOSFET; semiconductor device testing; die cracking; electrical overstress; finite element analysis; fractography analysis; power MOSFET; undamped inductive loading; undamped inductive switching; DVD; Diodes; Earth Observing System; Finite element methods; Inductors; MOSFET circuits; Packaging; Power semiconductor switches; Semiconductor device testing; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems, 2008. EuroSimE 2008. International Conference on

Conference_Location

Freiburg im Breisgau

Print_ISBN

978-1-4244-2127-5

Electronic_ISBN

978-1-4244-2128-2

Type

conf

DOI

10.1109/ESIME.2008.4525065

Filename

4525065