DocumentCode :
3490462
Title :
AlN Contour-Mode Vibrating RF MEMS for Next Generation Wireless Communications
Author :
Piazza, Gianluca ; Stephanou, Philip J. ; Pisano, Albert P.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania Univ., Philadelphia, PA
fYear :
2006
fDate :
19-21 Sept. 2006
Firstpage :
62
Lastpage :
65
Abstract :
AlN contour-mode vibrating RF MEMS resonator technology is described as capable of low-loss filtering and frequency synthesis for next generation wireless devices. Contour-mode piezoelectric resonators can span frequencies from 10 MHz up to few GHz on the same silicon chip offering high quality factors in air (1,000-4,000) and low motional resistance (25-700 Omega). Low loss (<- 1.5 dB) electrically and mechanically coupled filters and low phase noise oscillators can be easily implemented using this resonator technology. Low power transceiver architectures based on frequency hopping, multi-band filtering and direct frequency synthesis are presented as next generation wireless solutions that will be enabled by this new class of AIN contour-mode resonators
Keywords :
III-V semiconductors; aluminium compounds; crystal resonators; micromechanical resonators; phase noise; transceivers; wide band gap semiconductors; AlN; RF MEMS resonator; direct frequency synthesis; frequency hopping; multiband filtering; phase noise; piezoelectric resonators; transceiver architectures; wireless communications; Couplings; Electric resistance; Filtering; Frequency synthesizers; Q factor; Radiofrequency microelectromechanical systems; Resonant frequency; Resonator filters; Silicon; Wireless communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European
Conference_Location :
Montreux
ISSN :
1930-8833
Print_ISBN :
1-4244-0303-0
Type :
conf
DOI :
10.1109/ESSCIR.2006.307531
Filename :
4099704
Link To Document :
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