Title :
Wire bonding capillary profile and bonding process parameter optimization simulation
Author :
Qian, Qiuxiao ; Liu, Yong ; Luk, Timwah ; Irving, Scott
Author_Institution :
Fairchild Semicond. Corp., South Portland, ME
Abstract :
In this paper, a methodology for wire bonding parameter modeling is developed, which considers the capillary, FAB and device on silicon. The impact of capillary profile and bonding process parameters which include ball diameter, bonding temperature and bond wire material properties are studied to optimize the wire bonding assembly process. Finally, the comparison of the results with and without the modeling optimization shows that the probability of bonding failure is reduced after the wire bonding process is optimized.
Keywords :
lead bonding; ball diameter; bond wire material properties; bonding failure; bonding process parameter optimization simulation; bonding temperature; device on silicon; wire bonding capillary profile; Assembly; Bonding forces; Bonding processes; Circuit testing; Frequency; Material properties; Silicon; Stress; Temperature; Wire;
Conference_Titel :
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems, 2008. EuroSimE 2008. International Conference on
Conference_Location :
Freiburg im Breisgau
Print_ISBN :
978-1-4244-2127-5
Electronic_ISBN :
978-1-4244-2128-2
DOI :
10.1109/ESIME.2008.4525066
